URR Manufacturing stands out as one of the world’s leading companies in producing single-crystal lab-grown diamonds using a cutting-edge method. This technique, Microwave Plasma Chemical Vapor Deposition (MPCVD), has become the go-to process in recent years, despite existing for several decades. MPCVD’s efficiency and precision in diamond creation make it ideal for large-scale production.
URR Manufacturing’s single-crystal lab-grown diamonds boast exceptional consistency and predictability in their properties and performance. These diamonds find applications in cutting tools, optics, electronics, and detectors.
Among various diamond deposition techniques, MPCVD proves to be the most effective method for creating high-quality single-crystal diamonds.

Significant breakthroughs in URR Manufacturing’s CVD (Chemical Vapor Deposition) techniques have paved the way for the consistent production of diamonds specifically tailored for radiation detection. These advancements promise exciting possibilities for the future, including the creation of large-scale, uniform single-crystal diamond plates and films grown via homo-epitaxy.

The potential applications of URR’s CVD diamonds extend far beyond radiation detection. Their promising properties make them ideal candidates for various fields, including radio frequency (RF) diodes, bipolar junction transistors (BJTs), field-effect transistors (FETs), microelectromechanical systems (MEMS), and the broader electronics industry. Additionally, continued research and development hold immense potential for applications in the medical field, particularly as radiotherapy dosimeters.

Specifications and Tolerances:
• Lateral Tolerance : +0.2/-0 mm
• Crystallographic Orientation (Miscut) : +/-3°
• Crystallography : Typically 100% single sector {100}
• Edges : Laser Cut
• Edge Features : < 0.2 mm
• Edge Orientation : <110> edges
• Face Orientation : {100} faces
• Laser Kerf : 3°
• Side Roughness Ra : polished, Ra < 5 nm on {100} face
• Thickness Tolerance : +/- 0.05 mm

Material Properties:
• Boron Concentration [B] : <1 ppb
• Charge Collection Efficiency (CCE) : Typically >95%
• Charge Collection Distance (CCD) : Typically >475µm, @0.5 V µ/m applied field, for 500 µm plate
• Nitrogen Concentration : < 5 ppb
 

URR Manufacturing’s mastery of growing diamonds translates to exceptional advantages in mechanical applications due to their unmatched hardness and incredibly low coefficient of friction. This translates to extended tool life, reduced downtime, and ultimately, lower operating costs and a smaller carbon footprint. But URR’s diamonds go beyond just pure hardness. Their manufacturing process allows for the creation of ultra-fine edges, ensuring extreme precision in any application.

applications of mechanical-grade:
● Water Jet Nozzle Orifices
● Wire Drawing Machine Dies
● Surgical Diamond Blades
● Single Point Diamond Turning (SPDT) Blanks
● Milling Tool Blanks

Specifications and Tolerances
• Lateral Tolerance :+0.2/-0 mm
• Edges :Laser Cut
• Edge Features :< 0.2 mm
• Laser Kerf :3°
• Side 1, Roughness Ra :polished, Ra < 50 nm
• Side 2, Roughness Ra :lapped, Ra < 250 nm
• Thickness Tolerance :+/- 0.05 mm

Material Properties
• Fracture Toughness : 8.5 MPa
• Hardness : 80± 18 GPa @300K
• Poisson’s Ratio : 0.1
• Thermal Conductivity : >1000 W/mK @300 K
• Young’s Modulus : 1054 Gpa

Lab-created diamonds boast a thermal conductivity five times greater than copper, making them ideal heat sinks while simultaneously acting as electrical insulators. This unique combination creates a perfect solution for managing thermal challenges in electronic devices. CVD diamonds offer all the exceptional properties of natural single-crystal diamonds, but with significantly fewer limitations in size and shape. This opens doors for their use in temperature-critical packages.

The ever-increasing demand for smaller devices with higher power output creates significant heat dissipation challenges. High thermal heat flux can severely impact device performance and reliability. URR’s diamonds, with their unmatched thermal conductivity and high electrical resistivity, offer a solution. By effectively transferring heat away from critical components, they allow for increased microprocessor frequencies, higher output power within smaller devices, and ultimately, longer lifespans for electronic components.

Specifications and Tolerances
• Lateral Tolerance :+0.2/-0 mm
• Edges :Laser Cut
• Edge Features :< 0.2 mm
• Laser Kerf :3°
• Thickness Tolerance :+/- 0.05 mm
• Side 1, Roughness Ra :polished, Ra < 50 nm
• Side 2, Roughness Ra :lapped, Ra < 250 nm

Material Properties
• Bulk Resistivity (Rv) : 1x Ohm cm
• Surface Resistivity (Rs) : 1x Ohm cm
• Thermal Conductivity : >1000 W/mK @293K
• Thermal Diffusivity : >5.5 @ 300 K
• Thermal Expansion Coefficient : 1.0 ± 0.1 @ 300 K (ppm/K)
• Thermal Expansion Coefficient 2 : 4.4 ± 0.1 @ 1000 K (ppm/K)

Lab-grown diamonds excel in applications demanding exceptional properties. Their incredibly high transmission across a broad range of wavelengths, coupled with their unmatched hardness and chemical inertness, makes them the ideal choice for pushing boundaries. CVD diamonds are perfect for scenarios requiring higher power, larger surface areas, and resistance to hazardous materials or demanding exceptional strength. URR offers optical-grade diamond films in various thicknesses and customizable geometries to meet specific application needs.

These exceptional properties translate into benefits across various fields, including:
● High-Energy Research
● X-ray Applications
● Multi-wavelength Spectroscopy
● Infrared and Terahertz Applications
● Microwave Applications
● High-Power Laser Systems
● Monochromators

Specifications and Tolerances
• Lateral Tolerance :+0.1/- 0.1 mm
• Thickness :0.50mm
• Edges :Laser Cut
• Edge Features :< 0.2 mm
• Laser Kerf :3°
• Parallelism (µ/mm) :1
• Thickness Tolerance :+/- 0.05 mm
• Side Roughness Ra :polished, Ra < 5 nm on

Material Properties
• Absorption Coefficient (4) : Absorption < 0.05 cm^-1, at 10.6 µ m)
• Absorption Coefficient (5) : min 0.8 at 3.7 µm
• Absorption Coefficient (9) : Absorption < 0.1 cm^-1, at 1.064 µ m)
• Refractive Index (10.6 µm) (1) : 2.376
• Refractive Index (1064 µm) : 2.392
• Transmission(4) : 71.4 % at 8-200µm (1 mm thick
• Transmission (5) : >70.6 % at 633nm (1 mm thick
• Flatness (PV) Fringe @ 632 nm : < 3